High Reliable In Situ Steam Generation Process for 1.5-2.5nm Gate Oxides
نویسندگان
چکیده
INTRODUCTION With the present downscaling of MOS devices, gate oxides have been pushed towards their limit regarding leakage current and reliability. In this context, traditional dry oxides are expected to be limited to at least 1.6nm[1]-2.5nm[2]. In this paper, new RTP process, socalled ISSG (In Situ Steam Generated) oxidation, is proposed as an alternative for thickness as thin as 1.5nm2.5nm. It is shown that ISSG oxides combine both excellent process manufacturability and higher reliability than dry oxides.
منابع مشابه
Ionising radiation effects on MOSFET drain current
In these last years several works have been devoted to study the radiation effect in CMOS components with ultrathin gate oxide, showing that different types of leakage current can be produced by high-energy ionizing radiation. Radiation Induced Leakage Current (RILC) [1-2], Radiation Soft Breakdown (RSB) [3-5], and Single Event Gate Rupture (SEGR) [6] represent the most important degradation ph...
متن کاملBreakdown of Gate Oxides During Irradiation with Heavy Ions
Breakdown of thin gate oxides from heavy ions is investigated using capacitor test structures. Soft breakdown was observed for 45 Å oxides, but not for 75 Å oxides. Lower critical fields were observed when experiments were done with high fluences during each successive step. This implies that oxide defects play an important role in breakdown from heavy ions and that breakdown occurs more readil...
متن کاملSimultaneous high hydrogen content-synthesis gas production and in-situ CO2 removal via sorption-enhanced reaction process: modeling, sensitivity analysis and multi-objective optimization using NSGA-II algorithm
The main focus of this study is improvement of the steam-methane reforming (SMR) process by in-situ CO2 removal to produce high hydrogen content synthesis gas. Sorption-enhanced (SE) concept is applied to improve process performance. In the proposed structure, the solid phase CO2 adsorbents and pre-reformed gas stream are introduced to a gas-flowing solids-fixed bed reactor (GFSFBR). One dimens...
متن کاملSimulation of the Gate Current Sensitivity of a 1.5 nm Gate Oxide nMOST
Scaled MOS devices with gate oxides as thin as 1.5 nm are affected by direct-tunneling gate leakage. We demonstrate the sensitivity of the direct-tunneling gate current to variationsof both process parameters and parameters in the model of direct tunneling [3].The zero of the gate current is a probe for the form of the oxide near the drain-side corner of the poly gate. We argue that it can also...
متن کاملMethanol steam reforming; Effects of various metal oxides on the properties of a Cu-based catalyst
Ternary Cu/ZnO/metal oxide catalysts are prepared through the co-precipitation method under strict control of parameters like pH, calcination conditions, and precipitation temperature in a systematic manner. The metal oxides applied in this study consist of Al2O3, ZrO2, La2O3 and Ce2O3. The distinction of this work in comparison with similar research is a comprehensive investigatation of the ca...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 1999